Postdoctoral Researcher in III–V CQD… at King Abdullah… · Thuwal

Postdoctoral Research Positions in Colloidal Quantum Dots for Infrared Photodetectors

The FuN Lab at KAUST has made significant advances in III–V colloidal quantum dots (CQDs) and extended-SWIR PbS materials for high-performance infrared photodetectors and imaging systems. We invite applications for two postdoctoral positions focused on next-generation SWIR and room-temperature MWIR photodetectors based on III–V, Ag₂Te, and related CQDs.

The project aims to establish a materials-to-device platform using InAs-, InSb-, Ag₂Te-, and extended-SWIR PbS/PbSe-based CQDs, with emphasis on surface reconstruction, ligand engineering, precursor chemistry, energetic band alignment, low-trap-density CQD solids, and novel infrared photodetector architectures.

The first position focuses on CQD synthesis and surface chemistry, including solution-phase ligand exchange and thin-film engineering. The second position focuses on novel infrared photodetector architectures incorporating metasurfaces and optical-field manipulation for high-performance SWIR and exploratory room-temperature MWIR detection.

Candidates should hold a PhD in chemistry, materials science, electrical engineering, applied physics, or a related field, with expertise in colloidal nanocrystal synthesis or optoelectronic device physics. Experience in III–V CQDs, infrared photodetectors, surface spectroscopy, thin-film processing, or low-noise optoelectronic measurements is highly desirable.

This position focuses on the chemical control of III–V CQD surfaces. The researcher will develop surface-reconstructed, low-trap-density CQDs and ligand-exchanged CQD inks for infrared photodetectors. The central goal is to understand and control how precursor reactivity, surface stoichiometry, ligand engineering, and electronic passivation determine charge transport, recombination, band alignment, and photodetector performance.

Key Objectives

• Establish surface reconstruction strategies for InAs, InSb, and SWIR/MWIR-active CQDs to suppress trap states and improve electronic quality.
• Build ligand libraries for electronic passivation, controlled doping, and improved interdot coupling.
• Develop solution-phase ligand exchange processes for stable III–V CQD/nanorod inks.
• Control precursor reactivity, nucleation, growth, alloying, and shell formation.
• Determine energetic alignment between CQD films and charge-transport layers.
• Correlate surface chemistry with optical, electronic, and photodetector properties.

Responsibilities

• Synthesize III–V CQDs using air-free colloidal methods.
• Design and optimize precursor chemistry for InAs-, InSb-, Ag₂Te-, and PbSe/PbS-based nanocrystals.
• Perform surface reconstruction and ligand-exchange studies.
• Develop solution-processed CQD inks with controlled ligand density and colloidal stability.
• Characterize CQD surfaces using XPS, UPS, FTIR, NMR, TEM, XRD, absorption, PL, and time-resolved PL.
• Fabricate CQD thin films and evaluate morphology, conductivity, trap density, and stability.
• Study band alignment between CQDs and charge-transport layers.
• Work closely with the device-focused postdoc to connect surface chemistry with detector performance.
• Prepare manuscripts, contribute to grant reports, and present results at scientific meetings.

Successful candidates are expected to:

• Work independently while contributing to a collaborative research program.
• Maintain rigorous experimental records and reproducible protocols.
• Develop mechanistic understanding beyond empirical optimization.
• Publish in high-impact journals in materials chemistry, nanoscience, and optoelectronics.
• Mentor graduate students and contribute to a strong laboratory culture.
• Communicate results clearly in manuscripts, presentations, and group meetings.

Qualifications

• PhD in chemistry, materials science, nanoscience, or a related field.
• Strong experience in colloidal nanocrystal synthesis.
• Demonstrated expertise in air-free synthesis and Schlenk/glovebox techniques.
• Experience with ligand exchange, surface passivation, or nanocrystal surface chemistry.
• Familiarity with optical and structural characterization of semiconductor nanocrystals.
• Strong publication record in nanomaterials, colloidal quantum dots, or optoelectronic materials.
• Ability to work independently and collaboratively in a multidisciplinary team.

Preferred Experience

• Direct experience with III–V CQDs, especially InAs, InSb, or alloyed III–V nanocrystals.
• Experience with solution-phase ligand exchange.
• Knowledge of trap-state analysis, surface reconstruction, and electronic passivation.
• Experience with XPS/UPS-based surface and energy-level analysis.
• Experience preparing CQD thin films for photodetectors, LEDs, or solar cells.

Application instructions

We will only accept applications through Interfolio. Submissions by email to the PI or any team member will not be considered.