Postdoctoral Research Associate in Ultra-High Power Wide Bandgap Semiconductor RF Devices

Summary: The University of Bristol is seeking a Postdoctoral Researcher at the Centre for Device Thermography and Reliability (CDTR) to advance wide and ultra-wide bandgap semiconductor materials device technologies. The role involves developing TCAD device simulations, conducting thermal simulations, and collaborating with industrial partners and team researchers. Responsibilities: - Conduct research to advance wide and ultra-wide bandgap semiconductor materials device technologies and its understanding - Develop device simulation TCAD models to complement experiments and to support device design and to analyse device failure, breakdown and reliability - Develop thermal material/device thermal models for device design using finite element and other simulation tools and support short-term industrial contract Required Qualifications: - Postgraduate (PhD) experience in Physics, Materials Science or Engineering, or be working towards one, or equivalent professional qualification/experience - Extensive expertise required in TCAD device modelling - A willingness to work together with, and co-supervise, PhD students is necessary Preferred Qualifications: - Ideally with a good publication record - Desirable experience in finite element thermal modelling, physics-based modelling and electrical/thermal characterization of materials or devices Required Skills: TCAD device modelling, Wide bandgap semiconductor materials, Ultra-wide bandgap semiconductor materials, GaN semiconductor devices, Ga2O3 semiconductor devices, Finite element thermal modelling, Physics-based modelling, Electrical characterization, Thermal characterization, Device failure analysis, Device reliability analysis, Co-supervision